Title :
A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM´s
Author :
Dungan, T.E. ; Cooper, James A., Jr. ; Melloch, Michael R.
Author_Institution :
Purdue University, West Lafayette, IN
fDate :
5/1/1987 12:00:00 AM
Abstract :
We report measurements of 200-s charge-recovery time constants at 300 K in the dark for an MBE-grown GaAs p- -n+ - p-buried well structure. Storage-time-versus-temperature measurements indicate that the charge recovery is due to generation through midgap levels. The results suggest the possibility of MODFET- or MESFET-compatible single-transistor buried-well dynamic RAM´s capable of operating at or above room temperature.
Keywords :
Capacitance; Current measurement; DRAM chips; Electrons; Forward contracts; Gallium arsenide; MODFET circuits; Substrates; Time measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26617
