DocumentCode :
1120756
Title :
The ALDMOST: A new power MOS transistor
Author :
Habib, Serag E.
Author_Institution :
Cairo University, Giza, Egypt
Volume :
8
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
257
Lastpage :
259
Abstract :
A new lateral power MOSFET structure, named the Accumulation LDMOST (ALDMOST), is proposed. It relies on creation of an accumulation layer along the surface of the drift region. This surface accumulation layer exists only in the ON state. Simulation studies indicate that the product of the ON resistance by the area ( 
) of the ALDMOST is one-third to one-fifth that of a conventional LDMOST rated at the same breakdown voltage.
) of the ALDMOST is one-third to one-fifth that of a conventional LDMOST rated at the same breakdown voltage.Keywords :
Conductivity; Dielectrics and electrical insulation; Electrodes; Fingers; High-K gate dielectrics; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Surface resistance; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26622
Filename :
1487172
Link To Document :
