Title :
Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load
Author :
Wei, H.-J. ; Meng, C. ; Chang, Y.-W.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
A regenerative frequency divider with a differential transimpedance amplifier (TIA) active load using 0.35 mum SiGe HBT technology is demonstrated. The differential TIA is beneficial for higher frequency and lower sensitivity operation, and the inductive peaking enhances the bandwidth of the output buffer. From the experimental results, the operating frequency ranges from 5 to 27 GHz (fmax/fmm =5.2) for a supply voltage of 5 V and core power consumption of 49.5 mW. The chip size is 0.86 x 0.822 mm.
Keywords :
Ge-Si alloys; amplifiers; frequency dividers; heterojunction bipolar transistors; microwave bipolar transistors; SiGe; differential TIA; differential transimpedance amplifier; frequency 5 GHz to 27 GHz; output buffer; power 49.5 mW; regenerative frequency divider; size 0.35 mum; voltage 5 V; wide-ratio broadband HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071384
