Title :
Subhalf-micrometer p-channel MOSFET´s with 3.5-nm gate Oxide fabricated using X-ray lithography
Author :
Miyake, Masayasu ; Kobayashi, Toshio ; Deguchi, Kimiyoshi ; Kimizuka, Masakatsu ; Horiguchi, Seiji ; Kiuchi, Kazuhide
Author_Institution :
NTT Electrical Communications Laboratories, Kanagawa, Japan
fDate :
6/1/1987 12:00:00 AM
Abstract :
Subhalf-micrometer p-channel MOSFET´s with ultra-thin gate oxide (3.5 nm) have been fabricated using X-ray lithography and electron cyclotron resonance (ECR) plasma etching. The fabricated MOSFET´s with 0.2-µm channel lengths show long-channel behavior and extremely high (200 mS/mm) transconductance.
Keywords :
Annealing; Cyclotrons; Electrons; Etching; Plasma applications; Plasma devices; Plasma x-ray sources; Resonance; Transconductance; X-ray lithography;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26625
