DocumentCode
1120809
Title
A self-aligned ohmic metallization GaAs-Gate FET with integrated coupling diode
Author
Yuen, Albart T. ; Hu, Evelyn L. ; Long, Stephen I. ; Sullivan, Gery J.
Author_Institution
University of California, Santa Barbara, CA
Volume
8
Issue
6
fYear
1987
fDate
6/1/1987 12:00:00 AM
Firstpage
272
Lastpage
274
Abstract
A novel processing scheme has been demonstrated for the fabrication of GaAs/AlGaAs semiconductor-insulator-semiconductor FET´s (SISFET´s). It was shown that a self-aligned ohmic (SAO) metal deposition could be used, without any additional ion implantation, to contact the two-dimensional electron gas (2DEG) of the SISFET. The process incorporates a coupling diode epitaxially grown atop the semiconductor gate (CDFL scheme [1]). Also, a depletion-mode MESFET was fabricated within the GaAs-gate layer in order to demonstrate the feasibility of a SISFET/MESFET inverter.
Keywords
Electrons; FETs; Inverters; Ion implantation; MESFETs; MODFETs; Metallization; Schottky diodes; Semiconductor diodes; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26627
Filename
1487177
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