DocumentCode
1120810
Title
Room-temperature continuous-wave operation of long wavelength (λ9.5 μm) MOVPE-grown quantum cascade lasers
Author
Pflügl, C. ; Diehl, L. ; Tsekoun, A. ; Go, R. ; Patel, C.K.N. ; Wang, X. ; Fan, J. ; Tanbun-Ek, T. ; Capasso, F.
Author_Institution
Harvard Univ., Cambridge
Volume
43
Issue
19
fYear
2007
Firstpage
1026
Lastpage
1028
Abstract
High-power continuous-wave operation of long wavelength quantum cascade lasers grown by metal organic vapour phase epitaxy is reported. The lasers have been processed as buried heterostructures with thick gold-plated contacts. The devices emit at a wavelength of 9.5 μm with output powers of several hundreds of milliwatts at room temperature.
Keywords
MOCVD coatings; quantum cascade lasers; semiconductor lasers; vapour phase epitaxial growth; buried heterostructures; long wavelength MOVPE grown quantum cascade laser; metal organic vapour phase epitaxy; room temperature continuous wave operation; temperature 293 K to 298 K; thick gold plated contact; wavelength 9.5 μm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20072162
Filename
4302806
Link To Document