DocumentCode :
1120822
Title :
Transient switching of the parasitic bipolar device of an epitaxial CMOS transistor
Author :
Chang, Wen-Hsing ; Rodriguez, M.D.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
8
Issue :
6
fYear :
1987
fDate :
6/1/1987 12:00:00 AM
Firstpage :
275
Lastpage :
276
Abstract :
The turn-on delay time of the vertical parasitic bipolar device of a CMOS transistor after the application of a latch-up triggering signal to forward bias the n+ source junction was studied. We found that the delay time for the device on an epitaxial CMOS transistor is in the order of a few nanoseconds, which is much shorter than that on a nonepitaxial CMOS transistor.
Keywords :
CMOS process; CMOS technology; Circuits; Delay effects; Nanoscale devices; Silicon; Substrates; Testing; Transient response; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26628
Filename :
1487178
Link To Document :
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