Title :
GaAs MESFET´s fabricated on InP substrates
Author :
Asano, K. ; Kasahara, K. ; Itoh, Tomohiro
Author_Institution :
NEC Corporation, Kawasaki, Japan
fDate :
7/1/1987 12:00:00 AM
Abstract :
This paper reports the first successful MESFET fabrication in GaAs layers grown directly on InP substrates by molecular beam epitaxy (MBE). The fabricated GaAs MESFET´s exhibit good I-V curves with complete pinch-off and saturation characteristics. About 100-mS/ mm transconductance was obtained for a 1.2-µm gate length device.
Keywords :
Buffer layers; Epitaxial growth; Gallium arsenide; Indium phosphide; Integrated circuit technology; Lattices; MESFETs; Molecular beam epitaxial growth; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26634
