DocumentCode :
1120949
Title :
The effect of post-oxygen-implant annealing temperature on the channel mobilities of CMOS devices in oxygen-implanted silicon-on-insulator structures
Author :
Mao, Bor-Yen ; Matloubian, Mishel ; Chen, Cheng-Eng ; Sundaresan, R. ; Slawinski, C.
Author_Institution :
Texas Instruments Incorporated, Dallas, TX
Volume :
8
Issue :
7
fYear :
1987
fDate :
7/1/1987 12:00:00 AM
Firstpage :
306
Lastpage :
308
Abstract :
The effects of post-oxygen-implant annealing temperature on the characteristics of MOSFET´s in oxygen-implanted silicon-on-insulator (SOI) substrates are studied. The results show significant improvements in the electron and hole mobilities near the silicon/buried-oxide interface and in the electron mobility of the front-gate n-channel transistors in SOI substrates with higher post-oxygen-implant annealing temperature. The improvements in the transistor characteristics hence are attributed to the annihilation of oxygen precipitates and the reduction of defect density in the residual silicon film. By comparing the ring oscillators fabricated in SOI substrates annealed at 1150°C and 1250°C after oxygen implantation, a speed improvement of 15 percent is observed in substrates annealed at higher temperature.
Keywords :
Annealing; Electron mobility; Implants; Insulation; MOSFETs; Optical films; Semiconductor films; Silicon on insulator technology; Substrates; Temperature control;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26640
Filename :
1487190
Link To Document :
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