• DocumentCode
    1120955
  • Title

    Post-breakdown conduction in ultra-thin HfO2 films in MOS transistors

  • Author

    Miranda, E. ; Pey, K.L. ; Ranjan, R. ; Tung, C.H.

  • Author_Institution
    Univ. Autonoma de Barcelona, Barcelona
  • Volume
    43
  • Issue
    19
  • fYear
    2007
  • Firstpage
    1050
  • Lastpage
    1051
  • Abstract
    A compact model for the post-breakdown current in Si/HfO2/TaN/TiN structures suitable for both gate voltage polarities is presented. Positive gate injection is considered to be dominated by the charge generation mechanism within the substrate depletion layer, whereas negative gate injection is simulated using a diode-like model with series resistance correction. The implicit equation for the current- voltage characteristic resulting for this latter mechanism is solved using the Lambert W function.
  • Keywords
    MOSFET; electric breakdown; elemental semiconductors; hafnium compounds; high-k dielectric thin films; silicon; tantalum compounds; titanium compounds; Lambert W function; MOS transistors; Positive gate injection; Si-HfO2-TaN-TiN; charge generation mechanism; diode-like model; gate voltage polarities; negative gate injection; post-breakdown conduction; series resistance correction; substrate depletion layer; ultra-thin films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071110
  • Filename
    4302821
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120955