DocumentCode :
1121030
Title :
9B9 - The theory of semiconductor lasers with consideration of saturation effects
Author :
Krokhin, O.N.
Author_Institution :
Lebedev Physical Institute, Moscow, USSR
Volume :
2
Issue :
9
fYear :
1966
fDate :
9/1/1966 12:00:00 AM
Firstpage :
605
Lastpage :
607
Abstract :
Semiconductor behavior in strong fields having a frequency close to the absorption band is considered. It is proved that only the slowing down and recombination times of four different relaxation times are of importance for weaker fields. In this case, equality of Fermi-level electron and hole quasi-levels to light quantum energy corresponds to a saturation condition. A semiconductor absorption coefficient regarding saturation is calculated.
Keywords :
Absorption; Acoustic transducers; Bandwidth; Electrons; Frequency; Gallium arsenide; Laser theory; Laser tuning; Semiconductor diodes; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1966.1074108
Filename :
1074108
Link To Document :
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