• DocumentCode
    1121064
  • Title

    Asymptotic electron energy flux equations for hot-carrier transport simulation

  • Author

    Szeto, Simon ; Reif, Rafael

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, MA
  • Volume
    8
  • Issue
    8
  • fYear
    1987
  • fDate
    8/1/1987 12:00:00 AM
  • Firstpage
    336
  • Lastpage
    337
  • Abstract
    In isothermal device simulations, the Bernoulli function has to be computed carefully to avoid potential numerical difficulties. Problems may arise when the difference in discretized potential values between two nodes is sufficiently small. In nonisothermal hot-carrier transport, additional asymptotic cases can arise depending on the difference in the electron temperature values. In this letter, all possible limiting expressions for the electron energy flux are presented. A parallel treatment will lead to the corresponding equations for current densities.
  • Keywords
    Boltzmann equation; Computational modeling; Convergence; Current density; Differential equations; Electrons; Hot carriers; Isothermal processes; Semiconductor devices; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26651
  • Filename
    1487201