DocumentCode :
1121064
Title :
Asymptotic electron energy flux equations for hot-carrier transport simulation
Author :
Szeto, Simon ; Reif, Rafael
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
Volume :
8
Issue :
8
fYear :
1987
fDate :
8/1/1987 12:00:00 AM
Firstpage :
336
Lastpage :
337
Abstract :
In isothermal device simulations, the Bernoulli function has to be computed carefully to avoid potential numerical difficulties. Problems may arise when the difference in discretized potential values between two nodes is sufficiently small. In nonisothermal hot-carrier transport, additional asymptotic cases can arise depending on the difference in the electron temperature values. In this letter, all possible limiting expressions for the electron energy flux are presented. A parallel treatment will lead to the corresponding equations for current densities.
Keywords :
Boltzmann equation; Computational modeling; Convergence; Current density; Differential equations; Electrons; Hot carriers; Isothermal processes; Semiconductor devices; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26651
Filename :
1487201
Link To Document :
بازگشت