DocumentCode
1121064
Title
Asymptotic electron energy flux equations for hot-carrier transport simulation
Author
Szeto, Simon ; Reif, Rafael
Author_Institution
Massachusetts Institute of Technology, Cambridge, MA
Volume
8
Issue
8
fYear
1987
fDate
8/1/1987 12:00:00 AM
Firstpage
336
Lastpage
337
Abstract
In isothermal device simulations, the Bernoulli function has to be computed carefully to avoid potential numerical difficulties. Problems may arise when the difference in discretized potential values between two nodes is sufficiently small. In nonisothermal hot-carrier transport, additional asymptotic cases can arise depending on the difference in the electron temperature values. In this letter, all possible limiting expressions for the electron energy flux are presented. A parallel treatment will lead to the corresponding equations for current densities.
Keywords
Boltzmann equation; Computational modeling; Convergence; Current density; Differential equations; Electrons; Hot carriers; Isothermal processes; Semiconductor devices; Temperature dependence;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26651
Filename
1487201
Link To Document