• DocumentCode
    1121069
  • Title

    9B7 - Direct frequency modulation of a semiconductor laser by ultrasonic waves

  • Author

    Ripper, J.E. ; Pratt, G.W., Jr. ; Whitney, C.G.

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, Mass.
  • Volume
    2
  • Issue
    9
  • fYear
    1966
  • fDate
    9/1/1966 12:00:00 AM
  • Firstpage
    603
  • Lastpage
    605
  • Abstract
    A discussion is given of frequency modulation of a semiconductor laser using ultrasonic waves. The principle used is the modulation of the dielectric constant of the material by the sound waves. This modulates the laser output due to the refractive index dependence of the mode frequencies. It is shown that a very high index of modulation can be achieved. Experimental results are reviewed for a gallium arsenide diode laser. Limitations of this technique and possible devices are considered.
  • Keywords
    Acoustic materials; Dielectric constant; Dielectric materials; Frequency modulation; Gallium arsenide; Laser modes; Optical materials; Refractive index; Semiconductor lasers; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1966.1074110
  • Filename
    1074110