DocumentCode
1121069
Title
9B7 - Direct frequency modulation of a semiconductor laser by ultrasonic waves
Author
Ripper, J.E. ; Pratt, G.W., Jr. ; Whitney, C.G.
Author_Institution
Massachusetts Institute of Technology, Cambridge, Mass.
Volume
2
Issue
9
fYear
1966
fDate
9/1/1966 12:00:00 AM
Firstpage
603
Lastpage
605
Abstract
A discussion is given of frequency modulation of a semiconductor laser using ultrasonic waves. The principle used is the modulation of the dielectric constant of the material by the sound waves. This modulates the laser output due to the refractive index dependence of the mode frequencies. It is shown that a very high index of modulation can be achieved. Experimental results are reviewed for a gallium arsenide diode laser. Limitations of this technique and possible devices are considered.
Keywords
Acoustic materials; Dielectric constant; Dielectric materials; Frequency modulation; Gallium arsenide; Laser modes; Optical materials; Refractive index; Semiconductor lasers; Semiconductor materials;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1966.1074110
Filename
1074110
Link To Document