Title :
Transistor nonlinearity-dependence on emitter bias current in P-N-P Alloy junction
Author_Institution :
Texas Instruments Inc., Dallas, Tex
Abstract :
A method of calculating the nonlinear behavior of class A common emitter transistor amplifiers from linear small signal measurements is given. Experimental results, obtained with a 500-milliwatt p-n-p alloy junction transistor, show the second and third harmonic distortion as a function of emitter bias current and driving source resistance. Distortion, calculated from small signal measurements, is shown for comparison.
Keywords :
Charge carriers; Circuits; Conductivity; Current measurement; Distortion measurement; Electrical resistance measurement; Equations; Harmonic distortion; P-n junctions; Space charge;
Journal_Title :
Audio, IRE Transactions on
DOI :
10.1109/TAU.1958.1166128
