Title :
Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifier
Author :
Baliga, B.Jayant
Author_Institution :
General Electric Company, Schenectady, NY
fDate :
9/1/1987 12:00:00 AM
Abstract :
A new operating mode for the merged p-i-n/Schottky (MPS) rectifier structure is analyzed. It is shown that these devices exhibit superior forward-drop and turn-off-speed characteristics. As an example, for the same forward drop, the 400-V MPS rectifier is an order of magnitude faster in switching speed when compared to a p-i-n rectifier. In addition, for equal switching speed, the MPS rectifier has much lower forward drop and leakage current.
Keywords :
Conductivity; Current density; Electric breakdown; Leakage current; Low voltage; Merging; PIN photodiodes; Performance analysis; Rectifiers; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26676
