DocumentCode :
1121345
Title :
Ultra low noise all niobium DC-SQUIDs
Author :
Daalmans, G.M. ; Bar, L. ; Bommel, F.R. ; Kress, R. ; Uhl, D.
Author_Institution :
Siemens Res. Lab., Erlangen, West Germany
Volume :
27
Issue :
2
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
2997
Lastpage :
3000
Abstract :
The noise and signal properties of SQUIDs with amorphous silicon barriers and Al2O3 barriers are studied. The barrier material is found to be of great importance for the value of the 1/f noise component. The best results were obtained for SQUIDs with Al2O3 barriers and a 1/f noise level at 1 Hz of about 1×10-6Φ/√Hz was found. After integration of coupling coils onto the SQUIDs, a signal limitation and a dramatic increase of the noise were found. Implementation of a damping circuitry over the coupling coil results in optimized signals (Δ V0/2)≃IcR) and a white noise level comparable to the white noise level without a coupling coil. The 1/f noise component for SQUIDs with a damped coupling coil is higher than for 1/f noise component of SQUIDs without a coupling coil. For SQUIDs with Al2O3 barriers, the 1/f noise level keeps below 3×10-6 Φ0/√Hz at 1 Hz. For SQUIDs with an amorphous silicon barrier the 1/f noise component changes per cooling cycle in an irregular way. The stability for thermal cycling and room-temperature storage is very good for all the devices
Keywords :
SQUIDs; alumina; aluminium; amorphous semiconductors; electron device noise; elemental semiconductors; niobium; silicon; 1/f noise component; 1/f noise level; Nb-Al-Al2O3-Nb; Nb-Si-Nb; barrier material; coupling coil; coupling coils; damping circuitry; room-temperature storage; signal limitation; signal properties; thermal cycling; white noise level; Acoustical engineering; Amorphous silicon; Circuit noise; Coils; Coupling circuits; Damping; Niobium; Noise level; SQUIDs; White noise;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.133841
Filename :
133841
Link To Document :
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