Title :
β-SiC MESFET´s and buried-gate JFET´s
Author :
Kelner, Galina ; Binari, Steven ; Sleger, Kenneth ; Kong, Hui ; Kong, H.
Author_Institution :
Naval Research Laboratory, Washington, DC
fDate :
9/1/1987 12:00:00 AM
Abstract :
β-SiC MESFET and buried-gate JFET structures have been fabricated and evaluated. Both structures employ an epitaxial n-on-p SiC layer grown by chemical vapor deposition on a p-type Si
Keywords :
Contacts; Fabrication; Hydrogen; MESFETs; Metallization; Plasma measurements; Pollution measurement; Polyimides; Silicon carbide; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1987.26682
