Statistics of Avalanche Current Buildup Time in Single-Photon Avalanche Diodes

The effects of avalanche region width, ionization coefficient ratio, and dead space on the breakdown time and timing jitter of a single-photon avalanche diode are investigated. Using a random ionization path length model, the breakdown time and the timing jitter are shown to decrease with breakdown probability, but increase with avalanche region width, decreasing ionization coefficient ratio, and ionization dead space. The model is used to compare the dependence of avalanche timing performance in Si and InP on avalanche region width.