• DocumentCode
    1121546
  • Title

    I-V Characteristics of oxygen-doped Si epitaxial film (OXSEF)/Si heterojunctions

  • Author

    Takahashi, Mitsutoshi ; Tabe, Michiharu ; Sakakibara, Yutaka

  • Author_Institution
    NTT, Atsugi-shi, Kanagawa, Japan
  • Volume
    8
  • Issue
    10
  • fYear
    1987
  • fDate
    10/1/1987 12:00:00 AM
  • Firstpage
    475
  • Lastpage
    476
  • Abstract
    We have fabricated oxygen-doped Si epitaxial film (OX-SEF)/Si heterodiodes to examine device capabilities of the new wide-gap material, OXSEF. Various locations of the p-n junction with respect to the OXSEF/Si interface are achieved by changing the annealing time for arsenic diffusion from the implanted poly-Si layer on top of the OXSEF. When the p-n junction is located at the heterointerface, the diode n-value is 1.4-1.5 after H2annealing. This can be reduced to 1.1-1.2 by pushing the p-n junction into a Si substrate of about 600 Å.
  • Keywords
    Annealing; Conductivity; Cutoff frequency; Diodes; Heterojunctions; Hydrogen; P-n junctions; Semiconductor films; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26699
  • Filename
    1487249
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1121546