DocumentCode :
1121595
Title :
Fabrication of monolithic lateral SNS junction structure for Bi-oxide systems
Author :
Usuk, T. ; Yoshisat, Y. ; Yasui, I. ; Yaman, K. ; Nakano, S.
Author_Institution :
Sanyo Electr. Co. Ltd., Osaka, Japan
Volume :
27
Issue :
2
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
3094
Lastpage :
3097
Abstract :
A novel monolithic lateral SNS structure of Bi-oxide systems has been developed in which the compositions of films were locally controlled in the lateral direction. Lateral SNS (BiSrCaCuO/BiSrCuO/BiSrCaCuO) structures which were made from a Ca-F/BSCO layer on MgO substrates have been developed. The BiSrCaCuO area, with a thickness of 150 nm, is composed of a 2212 phase with high crystallinity of the c-axis preferred orientation, and shows zero resistance at 85 K. The BiSrCuO indicates sufficiently low resistivity to be used as a normal barrier for SNS Josephson junctions. BSCO formation using Ca-diffusion into the surfaces of 2201 single crystals was successfully carried out
Keywords :
bismuth compounds; calcium compounds; high-temperature superconductors; strontium compounds; superconducting junction devices; 150 nm; 85 K; BiSrCaCuO-BiSrCuO-BiSrCaCuO; Josephson junctions; MgO substrates; high temperature superconductors; normal barrier; Amorphous materials; Annealing; Crystallization; Fabrication; Josephson junctions; Optical films; Plasma temperature; Sputtering; Superconducting devices; Superconducting films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.133866
Filename :
133866
Link To Document :
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