DocumentCode :
1121613
Title :
A new epitaxial lateral overgrowth silicon bipolar transistor
Author :
Neudeck, Gerold W.
Author_Institution :
Purdue University, West Lafayette, IN
Volume :
8
Issue :
10
fYear :
1987
fDate :
10/1/1987 12:00:00 AM
Firstpage :
492
Lastpage :
495
Abstract :
A new device structure and method of fabricating a silicon bipolar transistor is proposed. The device has reduced collector parasitic capacitance and resistance as compared to other advanced bipolar technologies. By using selective and lateral epitaxial overgrowth techniques the buried (N+) layer is not necessary. Two-dimensional computer simulations show the 
product to be reduced by a factor of 5.45 along with reduced CCB .
product to be reduced by a factor of 5.45 along with reduced CKeywords :
Bipolar transistors; Computer simulation; Etching; Fabrication; Oxidation; Silicon;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26705
Filename :
1487255
Link To Document :
