A new quantum mechanical channel mobility model for Si MOSFET´s

A new model is presented for the transverse field-dependent mobility in MOSFET´s. It is based on the diffuse scattering of electrons at the Si-SiO2interface in the narrow inversion layer, due to the uncertainty principle related momentum, of the electrons in induced quantum levels. Our calculations for unstressed material yield µ ≈ F^-αwith α ≈ 0.67 at high fields. For stressed material α falls to less than 0.2. Combining this channel mobility with bulk phonon scattering gives an excellent fit to a large body of data. Process-induced stress may account for the wide range in µ and α reported in the literature.