DocumentCode :
1121655
Title :
Fabrication of an all-refractory circuit using lift-off with image-reversal photoresist
Author :
Meier, Daniel L. ; Przybysz, John X. ; Kang, Joonhee
Author_Institution :
Westinghouse Electr. Corp., Pittsburgh, PA, USA
Volume :
27
Issue :
2
fYear :
1991
fDate :
3/1/1991 12:00:00 AM
Firstpage :
3121
Lastpage :
3124
Abstract :
A four-stage shift register was fabricated using Nb/Al-Al2 O3/Nb Josephson junctions, Mo resistors, Nb transmission lines, and SiO2 insulating layers. The circuit has 36 junctions (5 μm, 1000 A/cm2) and 61 resistors (1.2 Ω/square), with a minimum feature size of 2 μm. An eight-mask process was used in the fabrication. All material layers were deposited by sputtering. Patterning for all but one of the masking levels was done by lift-off using image-reversal lithography in most cases. Lift-off avoided many of the problems common to reactive ion etching (RIE), including the need for etch stops, nonuniformity in etching, and the formation of organic residue (polymer) on the wafer. RIE was used only in the patterning of the Nb counterelectrode, where a natural Al etch stop from the barrier layer is present. The simplicity associated with the lift-off of all other layers, including the trilayer, is thought to be a major factor in the successful fabrication of the circuit which operated properly up to 4.0 Gbit/s
Keywords :
alumina; digital integrated circuits; integrated circuit technology; niobium; photolithography; shift registers; superconducting junction devices; superconducting logic circuits; 2 micron; 4 GHz; 4 Gbit/s; 5 micron; Josephson junctions; Mo resistors; Nb counterelectrode; Nb transmission lines; Nb-Al-Al2O3-Nb; SiO2 insulating layers; all-refractory circuit; eight-mask process; fabrication; feature size; four-stage shift register; image-reversal lithography; image-reversal photoresist; lift off process; Distributed parameter circuits; Fabrication; Insulation; Josephson junctions; Lithography; Niobium; Resistors; Shift registers; Sputter etching; Sputtering;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.133872
Filename :
133872
Link To Document :
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