The Effects of a DC Power Layer in a 10-Nb-Layer Device for SFQ LSIs

We have evaluated the effects of a DC power (DCP) layer in a 10-Nb-layer device using SQUIDs and large-scale Josephson transmission lines (LS-JTLs). The 10-Nb-layer device has recently been developed for SFQ LSIs, with an active layer including Josephson junctions (JJs) at the top, two passive transmission line layers in the middle, and the DCP layer for bias current feeds at the bottom. The evaluation with SQUIDs revealed that the 10-Nb-layer device structure drastically reduced the magnetic flux induced by DC currents flowing through the DCP line, in comparison with the previous advanced process device structure. A major factor for this reduction was an increase in the number of ground layers between the DCP layer and the active layer. In the test of the LS-JTLs containing about 12000 JJs, we obtained the operating margins as wide as numerically simulated ones. We also observed no difference in the margins between a method for extracting ground return currents through ground layers and that through the dedicated layer. These results demonstrated that the 10-Nb-layer device structure is suitable for SFQ-LSIs.