Title :
PECVD SiO2 dielectric for niobium Josephson IC process
Author :
Lee, S.Y. ; Nandakumar, V. ; Murdock, B. ; Hebert, D.
Author_Institution :
Tektronix Inc., Beaverton, OR, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
The authors have produced high-quality SiO2 dielectric films by plasma-enhanced chemical vapor deposition (PECVD) applicable to a Nb-based, all-refractory Josephson integrated circuit process. PECVD SiO2 was used for two insulating layers, ground plane isolation, and resistor isolation. Evaporated SiO was retained as the last insulating layer because the relatively high temperature needed for PECVD can degrade the already fabricated Josephson junctions. A thin SiO barrier layer had to be used in order to prevent the deterioration of the critical temperature of the ground plane. A successful application has been demonstrated by the fabrication and testing of a Josephson sampler circuit which shows acceptable Josephson junction current-voltage characteristic and a time resolution of 4.9 ps measured in liquid helium
Keywords :
dielectric thin films; integrated circuit technology; plasma CVD; silicon compounds; superconducting integrated circuits; 4.9 ps; Josephson IC process; Josephson sampler circuit; PECVD; SiO barrier layer; SiO2 dielectric; current-voltage characteristic; ground plane isolation; insulating layers; plasma-enhanced chemical vapor deposition; resistor isolation; time resolution; Chemical vapor deposition; Circuit testing; Degradation; Dielectric films; Dielectrics and electrical insulation; Josephson junctions; Land surface temperature; Plasma chemistry; Plasma temperature; Resistors;
Journal_Title :
Magnetics, IEEE Transactions on
