DocumentCode :
1121749
Title :
An In0.52 Al0.48 As/n+-In0.53 Ga0.47 As MISFET with a heavily doped channel
Author :
Del Alamo, Jesus A. ; Mizutani, Takashi
Author_Institution :
NTT, Kanagawa, Japan
Volume :
8
Issue :
11
fYear :
1987
fDate :
11/1/1987 12:00:00 AM
Firstpage :
534
Lastpage :
536
Abstract :
An In0.52 Al0.48 As/n+-In0.53 Ga0.47 As MIS-type field-effect transistor (FET) with a channel doped at a 7 × 1017cm-3level has been fabricated on an InP substrate. A device with a 2-µm channel length has yielded a maximum transconductance of 152 mS/mm, 
GHz, and 
GHz. At 10 GHz, the maximum available gain is 17.4 dB. The performance of this device shows that heavily doped channel FET\´s are very promising for high-frequency operation.
GHz, and GHz. At 10 GHz, the maximum available gain is 17.4 dB. The performance of this device shows that heavily doped channel FET\´s are very promising for high-frequency operation.Keywords :
Electron mobility; FETs; Indium phosphide; Insulation; Lattices; MESFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage; Transconductance;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1987.26719
Filename :
1487269
Link To Document :
