Title :
Design and Analysis of Highly Energy/Area-Efficient Multiported Register Files With Read Word-Line Sharing Strategy in 65-nm CMOS Process
Author :
Xiaoyang Zeng ; Yi Li ; Yuejun Zhang ; Shujie Tan ; Jun Han ; Xingxing Zhang ; Zhang Zhang ; Xu Cheng ; Zhiyi Yu
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
This brief proposes an ultralow-voltage four-read-port and two-write-port multiported register file with a novel architecture of read word-line sharing strategy for energy/area efficiency. Static read circuits and memory cells with nonminimum channel length are introduced to improve the ultralow-voltage performance. The chip of this register file is fabricated in 65-nm LP CMOS process and occupies the area of 0.019 mm$^{2}$ . Test results show that the minimum operation voltage is 320 mV with its corresponding max frequency 110 KHz. The minimum energy consumption is 0.94 pJ/cycle at the point of 400 mV, 850 KHz, corresponding to 0.15 fJ/port/bit/cycle after normalization. Compared with the state-of-the-art designs, it improves energy efficiency by 25% and saves the area by 58.7%.
Keywords :
CMOS integrated circuits; LP CMOS process; area efficiency; energy efficiency; frequency 850 kHz; nonminimum channel length; read word-line sharing strategy; size 65 nm; static read circuits; two-write-port multiported register file; ultralow-voltage four-read-port; voltage 320 mV; voltage 400 mV; Arrays; Capacitance; Decoding; Energy consumption; Multiplexing; Registers; Solid state circuits; Energy efficiency; multipored register file; read word-line sharing (RWLS); static read circuits; ultralow-voltage circuits; ultralow-voltage circuits.;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
DOI :
10.1109/TVLSI.2014.2334693