Fabrication of three terminal devices via a whole-wafer processing route

Author

Amin, H. ; Blamire, M.G. ; Page, K. ; Evetts, J.E.

Author_Institution

Dept. of Mater. Sci. & Metall., Cambridge Univ., UK

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

3145

Lastpage

3148

Abstract

Using a whole-wafer route, the authors have fabricated high-quality three-terminal Nb(AlO_x)Nb(AlO_x)Nb devices with lead connections to each of the Nb layers, the middle Nb layer being on the order of 10 nm thick. A detailed description is presented of the adopted processing route, and recent results showing the junctions, independently biased, behaving as strongly coupled oscillators are discussed. The characteristics of the individual junctions show that the additional processing required to make the middle connection does not reduce the quality of the junctions. Preliminary results also show that the close proximity of the junctions possible with this route ensures strong inductive coupling (calculations for the present wafer dimensions give a coupling coefficient of 0.6) indicating its potential application in millimeter-wave coupling

Keywords

aluminium compounds; niobium; solid-state microwave devices; superconducting junction devices; Nb-AlO_x-Nb-AlO_x-Nb; close proximity of junctions; coupling coefficient; fabrication; lead connections; middle connection; millimeter-wave coupling; strong inductive coupling; strongly coupled oscillators; three terminal devices; whole-wafer processing route; Coupling circuits; Electrodes; Fabrication; Josephson junctions; Large scale integration; Materials science and technology; Niobium; Oscillators; Superconducting films; Temperature dependence;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133878

Filename

133878