DocumentCode
1121859
Title
HEMT-Based Readout Technique for Dark- and Photon-Count Studies in NbN Superconducting Single-Photon Detectors
Author
Kitaygorsky, Jennifer ; Dorenbos, Sander ; Reiger, Elisabeth ; Schouten, Raymond ; Zwiller, Val ; Sobolewski, Roman
Volume
19
Issue
3
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
346
Lastpage
349
Abstract
Dark counts in superconducting single-photon detectors (SSPDs) manifest themselves as spontaneous, transient voltage pulses, typically indistinguishable from photon counts. We present here a new readout technique based on integrating the SSPD with a low-noise, cryogenic high-electron-mobility transistor (HEMT) with high-input impedance. This arrangement allowed us to achieve amplitude resolution of the recorded output transients. In two-dimensional superconducting nanostripes, the physics of photon counting is based on the hotspot formation mechanism, while the dark counts correspond to voltage transients triggered by the vortex-antivortex motion and/or phase-slip centers. Thus, their respective transients can be distinguished by comparing the output pulse amplitude distributions. Our scheme also allowed us to perform photon-energy-resolution studies by comparing the SSPD output pulse amplitude distributions (the mean pulse amplitude and the distribution width) collected for incident single photons with different energies.
Keywords
high electron mobility transistors; niobium compounds; superconducting photodetectors; 2D superconducting nanostripes; HEMT based readout; NbN; dark count; high electron mobility transistor; photon count; superconducting single photon detectors; transient voltage pulses; vortex-antivortex motion; Dark counts; photon spectral resolution; photon-number resolution; superconducting nanowires; superconducting single-photon detectors;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2009.2018191
Filename
5153014
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