DocumentCode
1121998
Title
Fabrication of micron size Nb/Al-Al2O3/Nb junctions with a trilevel resist liftoff process
Author
Lichtenberger, A.W. ; Lea, D.M. ; Li, C. ; Lloyd, F.L. ; Feldman, M.J. ; Mattauch, R.J. ; Pan, S.K. ; Kerr, A.R.
Author_Institution
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume
27
Issue
2
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
3168
Lastpage
3171
Abstract
A trilevel resist, consisting of polyimide planarization, SiO2 barrier, and photoresist, was used to pattern junction areas in Nb/Al-Al2O3/Nb trilayer films. After reactive ion etching to define the junction areas, the perimeter of the junction was revealed, and excellent liftoff structures were defined with an oxygen plasma shrink of the exposed polyimide sidewalls. A subsequently deposited insulation layer seals the sides and the top surface along the perimeter of the Nb counter electrode button. High-quality superconductor-insulator-superconductor (SIS) junctions with diameters as small as 1.2 μm and V m as large as 1500 mV at 2.0 K have been fabricated. An SIS receiver using these junctions with integrated tuning elements has a DSB noise temperature of 58 K at 230 GHz. This is believed to be the lowest receiver noise temperature ever reported at this frequency
Keywords
alumina; aluminium; electron device noise; mixers (circuits); niobium; solid-state microwave devices; superconducting junction devices; 1.2 micron; 1.5 V; 2 K; 230 GHz; DSB noise temperature; Nb counter electrode; Nb-Al-Al2O3-Nb; SIS junctions; SIS receiver; SiO2 barrier; diameters; integrated tuning elements; liftoff structures; photoresist; polyimide planarization; reactive ion etching; receiver noise temperature; superconductor-insulator-superconductor; trilevel resist liftoff process; Etching; Fabrication; Insulation; Niobium; Planarization; Plasma applications; Plasma temperature; Polyimides; Resists; Superconducting device noise;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.133884
Filename
133884
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