• DocumentCode
    1122008
  • Title

    Cross-sectional TEM observation of Nb/AlOx-Al/Nb junction structures

  • Author

    Imamura, T. ; Hasuo, S.

  • Author_Institution
    Fujitsu Lab. Ltd., Atsugi, Japan
  • Volume
    27
  • Issue
    2
  • fYear
    1991
  • fDate
    3/1/1991 12:00:00 AM
  • Firstpage
    3172
  • Lastpage
    3175
  • Abstract
    A study of the microstructure of Nb/AlOx-Al/Nb Josephson junctions by cross-sectional transmission electron microscopy (TEM) yielded information regarded the junction barrier region. Both thick Nb and several-nanometer Al form polycrystalline films with columnar structures. Nb is oriented to the (110) plane, and Al to the (111) plane. The 200-nm lower Nb has a wavy surface with -5-nm smoothness, but its surface is planarized by several-nanometer Al deposited on it. Thus, AlOx with a smoothness under 1 nm can be formed on Al. The upper Nb has a good crystalline structure, even just above the AlOx barrier
  • Keywords
    aluminium; aluminium compounds; niobium; superconducting junction devices; transmission electron microscope examination of materials; Josephson junctions; Nb-AlOx-Al-Nb; columnar structures; cross sectional TEM; crystalline structure; junction barrier region; junction structures; microstructure; smoothness; Artificial intelligence; Crystallization; Electrodes; Grain size; Microstructure; Niobium; Sputtering; Transmission electron microscopy; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.133885
  • Filename
    133885
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1122008