Title :
Operation of Toggle Flip-Flop Circuits Up to 500 GHz Based on Vertically-Stacked High-Temperature Superconductor Josephson Junctions
Author :
Kimura, Taishi ; Kajino, Kemmei ; Watanabe, Mitsuhiro ; Horii, Yuki ; Inoue, Masumi ; Fujimaki, Akira
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Nagoya, Japan
fDate :
6/1/2009 12:00:00 AM
Abstract :
We report a developed single-flux-quantum (SFQ) circuit fabrication process for vertically-stacked interface-treated Josephson junctions by using high-temperature superconductor (HTS) and also report the 500 GHz operation of a toggle flip-flop (TFF). As the first trial of the circuit operation, we fabricated TFF circuits, because TFF is used as a benchmark circuit to indicate potential of the circuit operating speed. To develop the circuit fabrication process, we utilized the counter YBCO layer as a wiring layer. We obtained resistively-shunted-junction behavior of single junction fabricated by new process. In addition, we observed current-voltage characteristics at the input port and the output port of the TFF, and confirmed that the input voltage coincided with twice the output voltage up to 1.1 mV at 4.2 K, which corresponds to the correct operation up to 500 GHz. This frequency is the highest value in HTS circuits ever observed, which suggests the high potential of the vertically-stacked JJs for the circuit operation.
Keywords :
barium compounds; flip-flops; high-temperature superconductors; submillimetre wave circuits; superconducting junction devices; yttrium compounds; YBCO layer; YBa2Cu3O7-delta; frequency 500 GHz; resistively-shunted-junction behavior; single-flux-quantum circuit fabrication process; superconductor Josephson junction; temperature 4.2 K; toggle flip-flop circuits; vertically-stacked high-temperature superconductor; High-temperature superconductors; Josephson junction; single-flux-quantum (SFQ) circuit; toggle-flip-flop (T-FF) circuit; vertically-stacked junctions;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2009.2018252