Title :
Electron transport in niobium-silicon-niobium structures
Author :
Heslinga, D.R. ; van Huffelen, W.M. ; Klapwijk, T.M.
Author_Institution :
Dept. of Appl. Phys., Groningen Univ., Netherlands
fDate :
3/1/1991 12:00:00 AM
Abstract :
A model for the voltage-carrying state of semiconductor coupled superconducting weak links is presented. Characteristic elements are the Schottky barrier at the interface and a nonequilibrium population of states in the semiconductor. Experimental results of several Nb-Si-Nb structures are shown to be partial agreement with the model. Deviations are thought to be caused by neglect of multiple Andreev reflections
Keywords :
Schottky effect; elemental semiconductors; metal-semiconductor-metal structures; niobium; silicon; superconducting junction devices; type II superconductors; Nb-Si-Nb; Schottky barrier; multiple Andreev reflections; nonequilibrium population; semiconductor coupled superconducting weak links; voltage-carrying state; Context modeling; Electrodes; Electrons; Josephson junctions; Physics; Schottky barriers; Silicon compounds; Superconducting logic circuits; Tunneling; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
