DocumentCode
1122245
Title
Electron transport in niobium-silicon-niobium structures
Author
Heslinga, D.R. ; van Huffelen, W.M. ; Klapwijk, T.M.
Author_Institution
Dept. of Appl. Phys., Groningen Univ., Netherlands
Volume
27
Issue
2
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
3264
Lastpage
3267
Abstract
A model for the voltage-carrying state of semiconductor coupled superconducting weak links is presented. Characteristic elements are the Schottky barrier at the interface and a nonequilibrium population of states in the semiconductor. Experimental results of several Nb-Si-Nb structures are shown to be partial agreement with the model. Deviations are thought to be caused by neglect of multiple Andreev reflections
Keywords
Schottky effect; elemental semiconductors; metal-semiconductor-metal structures; niobium; silicon; superconducting junction devices; type II superconductors; Nb-Si-Nb; Schottky barrier; multiple Andreev reflections; nonequilibrium population; semiconductor coupled superconducting weak links; voltage-carrying state; Context modeling; Electrodes; Electrons; Josephson junctions; Physics; Schottky barriers; Silicon compounds; Superconducting logic circuits; Tunneling; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.133908
Filename
133908
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