Title :
Fabrication and Characterization of Epitaxial NbN/TaN/NbN Josephson Junctions Grown by Pulsed Laser Ablation
Author :
Nevala, Minna R. ; Maasilta, Ilari J. ; Senapati, Kartik ; Budhani, Ramesh C.
Author_Institution :
Dept. of Phys., Univ. of Jyvaskyla, Jyvaskyla, Finland
fDate :
6/1/2009 12:00:00 AM
Abstract :
We report fabrication and characterization of epitaxial NbN/TaN/NbN Josephson junctions grown by pulsed laser ablation. These SNS junctions can be used as elements of rapid-single-flux-quantum (RSFQ) logic, which is a promising technology for high speed digital electronic devices. The NbN/TaN/NbN trilayer films were prepared on a single crystal MgO substrate by pulsed laser ablation, and patterned into junctions using a novel process utilizing e-beam lithography, chemical vapor deposition and e-beam evaporation. The quality of junctions was tested by measuring the temperature dependence of the junctions´ IcRn values, observed to be quite close to theoretical values.
Keywords :
Josephson effect; chemical vapour deposition; electron beam deposition; electron beam lithography; high-speed optical techniques; niobium compounds; pulsed laser deposition; superconducting epitaxial layers; superconductor-normal-superconductor devices; tantalum compounds; Josephson junctions; NbN-TaN-NbN; RSFQ; chemical vapor deposition; e-beam evaporation; e-beam lithography; high speed digital electronic devices; pulsed laser ablation; rapid-single-flux-quantum logic; superconductor epitaxial layers; superconductor trilayer films; superconductor-normal-superconductor devices; Josephson junctions; pulsed laser deposition; superconducting device fabrication; superconductor-normal-superconductor devices;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2009.2019030
