Title :
Voltage-Tunable Dual-Band In(Ga)As Quantum-Ring Infrared Photodetector
Author :
Dai, Jong-Horng ; Lin, Yi-lung ; Lee, Si-Chen
Author_Institution :
Nat.Taiwan Univ., Taipei
Abstract :
The ten-period In(Ga)As quantum-ring infrared photodetector (QRIP) prepared by molecular beam epitaxy is investigated. The quantum rings show narrow-sized distributions that are segregated into two groups. The QRIP demonstrates a dual-band operation with response peak shifting from the long wavelength of 9.5 m at biases less than 0.6V to the middle wavelength of 6.8mum at biases larger than 0.8 V. The maximum peak responsivity at 20K is 422 mA/W at 1.2-V bias.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; quantum well devices; InGaAs; dual-band operation; maximum peak responsivity; molecular beam epitaxy; voltage-tunable dual-band quantum-ring infrared photodetector; Annealing; Atomic force microscopy; Dual band; Fabrication; Gallium arsenide; Molecular beam epitaxial growth; Optical microscopy; Photodetectors; Quantum dots; Voltage; Dual band; infrared photodetector; quantum dots (QDs); quantum ring;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.903344
