Title :
A 2.5-GHz low-power, high dynamic range, self-tuned Q-enhanced LC filter in SOI
Author :
He, Xin ; Kuhn, William B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
Abstract :
Q-enhanced LC filter technology offers a promising approach to remove the off-chip preselect filter still required in current transceivers. However, reported designs fail to meet stringent system specifications such as dynamic range and noise figure for existing wireless standards. The complexity and inaccuracy of frequency and Q tuning have also prevented acceptance in industry applications. This paper presents a low-power and high-performance design targeted at Bluetooth in a silicon-on-isolator (SOI) CMOS process. Drawing 5 mA from a 3-V supply, it achieves 23-dB voltage gain (14-dB power gain), approximately 6-dB noise figure, and a 153-dB·Hz 1-dB compression point dynamic range, when operating with a 70-MHz bandwidth at 2.5 GHz. A simplified approach to frequency and Q tuning is also demonstrated, making Q-enhanced LC filtering feasible in industry application for the first time.
Keywords :
Bluetooth; CMOS integrated circuits; UHF filters; UHF integrated circuits; active filters; circuit tuning; integrated circuit design; low-power electronics; silicon-on-insulator; transceivers; 14 dB; 2.5 GHz; 23 dB; 3 V; 5 mA; 6 dB; 70 MHz; Bluetooth; CMOS integrated circuits; Q-enhanced LC filter; SOI; UHF filters; UHF integrated circuits; active filters; circuit tuning; integrated circuit design; low-power LC filter; low-power electronics; self-tuning; silicon-on-isolator; Bluetooth; CMOS process; Dynamic range; Filters; Frequency; Industry applications; Noise figure; Transceivers; Tuning; Voltage; Active filters; LC filters; RFCMOS; SOS; bandpass filters; full integration; self-tuning; silicon-on-isolator (SOI);
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2005.852043
