Title :
10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate
Author :
Liao, Yu-Sheng ; Lin, Gong-Ru ; Kuo, Hao-Chung ; Feng, Kai-Ming ; Feng, Milton
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The SONET OC-192 receiving performance of In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10 -9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4times10-15 W/Hz1/2 owing to its ultralow dark current of 3.6times10-7 A/cm2 . Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1times10-16 at receiving power of -6 dBm
Keywords :
III-V semiconductors; Q-factor; error statistics; gallium arsenide; indium compounds; optical receivers; p-i-n photodiodes; semiconductor growth; 10 Gbit/s; GaAs; GaAs substrate; In0.53Ga0.47As; In0.53Ga0.47As p-i-n photodiode; InGaP; Q-factor; SONET OC-192 receiver; bit error rate; dark current; eye diagram analysis; metamorphic InGaP buffer; noise equivalent power; Bandwidth; Bit error rate; Dark current; Frequency; Gallium arsenide; PIN photodiodes; Packaging; Q factor; SONET; Signal analysis; Bit-error rate (BER); GaAs; In; InGaP; OC-192; metamorphic; p-i-n photodiode (PINPD); receiver;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.877623
