10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

Author

Liao, Yu-Sheng ; Lin, Gong-Ru ; Kuo, Hao-Chung ; Feng, Kai-Ming ; Feng, Milton

Author_Institution

Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

18

Issue

17

fYear

2006

Firstpage

1822

Lastpage

1824

Abstract

The SONET OC-192 receiving performance of In_0.53Ga_0.47As p-i-n photodiode grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10 ^-9 at 10 Gb/s, a sensitivity of -17.8 dBm, and a noise equivalent power of 3.4times10^-15 W/Hz^1/2 owing to its ultralow dark current of 3.6times10^-7 A/cm². Eye diagram analysis at 10 Gb/s without transimpedance amplification reveals a statistically distributed Q-factor of 8.21, corresponding to a minimum BER of 1.1times10^-16 at receiving power of -6 dBm

Keywords

III-V semiconductors; Q-factor; error statistics; gallium arsenide; indium compounds; optical receivers; p-i-n photodiodes; semiconductor growth; 10 Gbit/s; GaAs; GaAs substrate; In_0.53Ga_0.47As; In_0.53Ga_0.47As p-i-n photodiode; InGaP; Q-factor; SONET OC-192 receiver; bit error rate; dark current; eye diagram analysis; metamorphic InGaP buffer; noise equivalent power; Bandwidth; Bit error rate; Dark current; Frequency; Gallium arsenide; PIN photodiodes; Packaging; Q factor; SONET; Signal analysis; Bit-error rate (BER); GaAs; In; InGaP; OC-192; metamorphic; p-i-n photodiode (PINPD); receiver;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.877623

Filename

1673477