Self-Assembled Nanotiles of Heteroepitaxial SiC on Si

Using an organometallic ion-beam deposition technique, self-assembled silicon carbide (SiC) nanotiles were fabricated on Si wafers. Nanosized semiconducting tiles are important in electronics and photonics technologies and will be applicable for single-electron and microlight-emitting devices. The SiC is a wide bandgap semiconductor used for UV light emitters and power devices. While many fabrication trials have been performed for silicon and germanium nanodots, to the authors´ knowledge, no prior reports of a heteroepitaxial growth of SiC nanodots or nanotiles have been made