Title :
Very low-noise Al0.3Ga0.7As/Ga0.65In0.35As/GaAs single quantum-well pseudomorphic HEMTs
Author :
Chao, P.C. ; Ho, P. ; Duh, K.H.G. ; Smith, P.M. ; Ballingall, J.M. ; Jabra, A.A. ; Lewis, N. ; Hall, E.L.
Author_Institution :
Electron. Lab., General Electric Co., Syracuse, NY, USA
Abstract :
AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; solid-state microwave devices; 0.55 to 1.6 dB; 15 to 7.6 dB; 18 to 60 GHz; Al 0.3Ga 0.7As-Ga 0.65In 0.35As-GaAs; EHF; GaAs-based HEMTs; InAs mole fraction; SHF; gain; maximum extrinsic transconductance; noise figure; noise performance; pseudomorphic HEMTs; semiconductors; single quantum-well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900018
