Metal-Gate/High- $\kappa$ /Ge nMOS at Small CET With Higher Mobility Than $\hbox {SiO}_{2}/\hbox {Si}$

High-performance TaN/TiLaO/La₂O₃/SiO₂/ (111)-Ge nMOSFETs show high mobility of 432 cm²/V ·s at 10¹³ cm^-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO₂/Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO₂ interfacial layer, and YbGex/n-Ge contact.