DocumentCode :
112296
Title :
Metal-Gate/High- 
/Ge nMOS at Small CET With Higher Mobility Than 
Author :
Liao, C.C. ; Ku, T.C. ; Lin, M.H. ; Lang Zeng ; Jinfeng Kang ; Xiaoyan Liu ; Chin, Alvin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
34
Issue :
2
fYear :
2013
fDate :
Feb. 2013
Firstpage :
163
Lastpage :
165
Abstract :
High-performance TaN/TiLaO/La2O3/SiO2/ (111)-Ge nMOSFETs show high mobility of 432 cm2/V ·s at 1013 cm-2 carrier density (Ns), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO2/Si universal mobility at wide medium-high Ns range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO2 interfacial layer, and YbGex/n-Ge contact.
Keywords :
MOSFET; carrier density; elemental semiconductors; germanium; high-k dielectric thin films; lanthanum compounds; laser beam annealing; silicon compounds; tantalum compounds; titanium compounds; ytterbium compounds; Ge; TaN-TiLaO-La2O3-SiO2; YbGe-Ge; capacitance-equivalent thickness; contact; interfacial layer; junction ideality factor; laser annealing; metal-gate-high-κ-germanium nMOSFET; size 1.1 nm; time 30 ns; wide range carrier density; Annealing; CMOS integrated circuits; Junctions; Logic gates; MOSFETs; Silicon; (111); Annealing; Ge; YbGe; high-$ kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2230241
Filename :
6403496
Link To Document :
