Title :
Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
Author :
Heo, Kyongwoo ; Hong, B.H. ; Lee, E.H. ; Lee, S.Y. ; Kim, Sungho ; Hwang, Sung Woo
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.
Keywords :
Schottky diodes; electrodes; equivalent circuits; indium compounds; resistors; silicon; thin film transistors; SIZO channel material; Schottky diode-resistor-Schottky-diode-equivalent circuit model; T-dependent electrical characteristics; T-dependent resistivity; a-SIZO-IZO thin-film transistors; a-SIZO-OMO thin-film transistors; amorphous silicon-doped-indium-zinc-oxide thin-film transistors; amorphous silicon-doped-oxide-metal-oxide thin-film transistors; channel resistance quantitative extraction; electrodes; temperature-dependent barrier height quantitative extraction; temperature-dependent electrical characteristics; variable range hopping conduction mechanism; Electrodes; Logic gates; Materials; Resistance; Schottky diodes; Semiconductor device measurement; Transistors; Amorphous silicon-doped indium–zinc–oxide (a-SIZO); barrier height; indium–zinc–oxide (IZO); oxide–metal–oxide (OMO); variable range hopping;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2226202
