A novel compact monolithic active regulated self-biased InP HEMT amplifier

Author

Kobayashi, K.W. ; Lai, R. ; Ng, G.I. ; Tan, K.L. ; Esfandiari, R. ; Streit, D.C. ; Berenz, J.B.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

4

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

238

Lastpage

240

Abstract

This letter reports on the first results of a monolithic active regulated self-biased HEMT amplifier fabricated in InP technology. The self-bias scheme incorporates an op-amp-based HEMT regulator topology that regulates the bias current to within 6% over a threshold variation of /spl plusmn/0.2 V. The DC yield based on this performance criteria was 75% across a wafer. The InP HEMT amplifier achieves an RF gain of 10-dB and a 3-dB bandwidth of 1-14 GHz. Across a wafer with a total threshold variation of 0.4 V, the gain variation was maintained to less than /spl plusmn/1 db. The compact integrated HEMT regulated amplifier circuit was realized using area-efficient analog design techniques that consumed less than 1.3/spl times/1.1 mm/sup 2/. This demonstration has far-reaching implications to the producibility and reliability of InP HEMT MMIC´s.<>

Keywords

III-V semiconductors; MMIC; electric current control; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; operational amplifiers; 1 to 14 GHz; 10 dB; 13 GHz; HEMT amplifier; InP; active regulation; area-efficient analog design techniques; compact monolithic; op-amp-based HEMT regulator topology; self-bias scheme; Bandwidth; Circuits; HEMTs; Indium phosphide; Maintenance; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Regulators; Topology;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.298252

Filename

298252