A high-performance W-band integrated source module using GaAs monolithic circuits

Author

Ho, Thomas C. ; Chen, S. ; Tadayon, S. ; Pande, K. ; Rice, P. ; Ghahremani, M.

Author_Institution

Microwave Signal Inc., Clarksburg, MD, USA

Volume

4

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

241

Lastpage

243

Abstract

A high-performance integrated source module using a U-band MMIC HBT DRO and a U-hand MMIC MESFET power amplifier in conjunction with a W-band MMIC high-efficiency varactor doubler has been developed for millimeter-wave system applications. This paper describes the development and performance of this W-hand integrated source module. Measured results of the complete integrated source module show an output power of 10.6 dBm at 92.6 GHz and less than -126 dBc/Hz phase noise at 5 MHz offset from the carrier. These results represent the highest reported power and phase noise achieved at W-band using HBT, MESFET, and varactor frequency-doubling technologies.<>

Keywords

MMIC; bipolar integrated circuits; dielectric resonators; field effect integrated circuits; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; microwave oscillators; modules; power amplifiers; varactors; 92.6 GHz; EHF; GaAs; GaAs monolithic circuits; MIMIC; MM-wave ICs; MMIC MESFET power amplifier; U-band MMIC HBT DRO; W-band; integrated source module; millimeter-wave system applications; varactor doubler; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Millimeter wave measurements; Millimeter wave technology; Noise measurement; Phase noise; Power measurement; Varactors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.298253

Filename

298253