DocumentCode :
1123499
Title :
High light output-power single-longitudinal-mode semiconductor laser diodes
Author :
Kobayashi, Kohroh ; Mito, Ikuo
Author_Institution :
Opto-Electronics Research Labs., NEC Corp., Kawasaki, Japan
Volume :
3
Issue :
6
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
1202
Lastpage :
1210
Abstract :
Issues related to realizing high light output-power single-longitudinal-mode InGaAsP/InP DFB LD´s have been studied experimentally and theoretically. Asymmetry in the reflections as the front and rear facets of DFB cavity has been found to result in enhanced single-longitudinal-mode selectivity and higher light output power from the front facet. Single-longitudinal-mode CW light output power as high as 103 mW has been obtained in a 1.3-μm DFB-DC-PBH LD with facet reflectivities of 2 and 80-90 percent. Low internal quantum efficiency is pointed out to be an important problem for 1.5-μm LD´s.
Keywords :
Optical fiber transmitters, lasers; Diode lasers; Fabry-Perot; Indium phosphide; Optical feedback; Optical fibers; Optical reflection; Power generation; Reflectivity; Repeaters; Stimulated emission;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1985.1074335
Filename :
1074335
Link To Document :
بازگشت