DocumentCode :
1123577
Title :
Optoelectronic components for multigigabit systems
Author :
Good, Robert C. ; Debney, B.T. ; Rees, Graham J. ; Buus, Jens
Author_Institution :
Plessey Research (Caswell), Ltd., Northants, England
Volume :
3
Issue :
6
fYear :
1985
fDate :
12/1/1985 12:00:00 AM
Firstpage :
1170
Lastpage :
1179
Abstract :
Gigabit data rates are becoming relevant for several applications areas, including computer interconnections, trunk telecommunications, and phased-array radar control. LED\´s, lasers, p-i-n FET\´s, photoconductors, and avalanche photodiodes are candidate components. Silicon NMOS, bipolar, GaAs FET, and heterojunction bipolar logic IC technologies are all appropriate and no obstacles are apparent to prevent direct modulation to \\sim10-20 Gbit/s. Wavelength multiplexing will impact strongly in several applications enabling complex new system architectures. Increasing speed and complexity will drive technology to higher optoelectronic integration levels.
Keywords :
FETs (field-effect transistors); Light-emitting diodes (LED´s); Optical fiber receivers; Optical fiber transmitters, lasers; Application software; Avalanche photodiodes; Computer applications; FETs; Laser radar; PIN photodiodes; Photoconductivity; Radar applications; Telecommunication computing; Telecommunication control;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1985.1074343
Filename :
1074343
Link To Document :
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