• DocumentCode
    1123688
  • Title

    Review of Radiation Damage to Silicon Solar Cells

  • Author

    Curtin, Denis J. ; Statler, Richard L.

  • Author_Institution
    COMSAT Laboratories Clarksburg, Md. 20734
  • Issue
    4
  • fYear
    1975
  • fDate
    7/1/1975 12:00:00 AM
  • Firstpage
    499
  • Lastpage
    513
  • Abstract
    This paper reviews a large number of silicon solar cell irradiation experiments performed over the last 10 years, including 1-MeV and energy spectrum electron studies, and low-(100-keV) and high-energy (up to 155-MeV) proton studies on bare and covered silicon solar cells of several types. The results of satellite flight experiments on individual solar cells are also presented, as well as data from complete solar arrays and data on the new high-efficiency solar cells. Experimental evidence indicates that the percentage of degradation is smaller in thin solar cells than in thick ones, and that cells with high resistivity (10 ¿·cm) degrade less than cells with lower resistivity (1 ¿·cm). It is shown that high-efficiency silicon solar cells produced at COMSAT Laboratories and pilot production groups of these cells retain most of their increased power output under irradiation. It is emphasized that all surfaces and edges of the solar cells must be completely shielded from the large flux protons in the space environment. Insufficiencies in the published data are noted in certain areas, and recommendations for additional research are presented. Finally, an extensive bibliography is included.
  • Keywords
    Bibliographies; Conductivity; Degradation; Electrons; Laboratories; Photovoltaic cells; Production; Protons; Satellites; Silicon;
  • fLanguage
    English
  • Journal_Title
    Aerospace and Electronic Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9251
  • Type

    jour

  • DOI
    10.1109/TAES.1975.308112
  • Filename
    4101443