Simulation of a novel, radiation-resistant active pixel sensor in a standard 0.25 μm CMOS technology

Author

Villani, Enrico Giulio ; Allport, P.P. ; Casse, G. ; Evans, A. ; Tyndel, M. ; Turchetta, R. ; Velthuis, J.J.

Author_Institution

Rutherford Appleton Lab., Didcot, UK

Volume

52

Issue

3

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

752

Lastpage

755

Abstract

CMOS monolithic active pixel sensors are currently developed for particle physics vertex detectors. Their radiation resistance has already been proved to be high enough for the devices to be used at machines like the linear collider, where the radiation fluence is expected to be of the order of 10¹² proton/cm². However, in order to address more radiation-harsh environments, we proposed a novel sensor structure based on the deep n-well, which is found in triple-well CMOS technologies. Potential benefits arising from this technology are investigated and simulation results for standard and novel structures compared.

Keywords

CMOS image sensors; position sensitive particle detectors; radiation effects; CMOS monolithic active pixel sensors; deep n-well; minimum ionizing particle; particle physics vertex detectors; radiation fluence; radiation resistance; radiation-harsh environments; standard 0.25 CMOS technology; triple-well CMOS technologies; CMOS image sensors; CMOS technology; Costs; Energy consumption; Helium; Ionizing radiation sensors; Pixel; Predictive models; Radiation detectors; Standards development; Minimum ionizing particle; monolithic active pixel sensors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.850980

Filename

1487719