Fermilab silicon strip readout chip for BTeV

Author

Yarema, Raymond ; Hoff, Jim ; Mekkaoui, Abderrezak ; Manghisoni, Massimo ; Re, Valerio ; Manfredi, Pier Francesco ; Ratti, Lodovico ; Speziali, Valeria

Author_Institution

Fermi Nat. Accel. Lab., USA

Volume

52

Issue

3

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

799

Lastpage

804

Abstract

A chip has been developed for reading out the silicon strip detectors in the new BTeV colliding beam experiment at Fermilab. The chip has been designed in a 0.25 μm complementary metal-oxide-semiconductor (CMOS) technology for high radiation tolerance. Numerous programmable features have been added to the chip, such as setup for operation at different beam crossing intervals. A full size chip has been fabricated and successfully tested. The design philosophy, circuit features, and test results are presented in this paper.

Keywords

noise; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; 0.25 micron; BTeV colliding beam experiment; CMOS; Fermilab silicon strip readout chip; beam crossing intervals; circuit features; complementary metal-oxide-semiconductor technology; design philosophy; front-end electronics; high radiation tolerance; noise; silicon strip detectors; CMOS technology; Circuit noise; Circuit testing; Detectors; Registers; Semiconductor device measurement; Semiconductor device noise; Silicon; Single event upset; Strips; CMOS; front-end electronics; noise; silicon strip detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.850935

Filename

1487726