DocumentCode :
1123898
Title :
Fermilab silicon strip readout chip for BTeV
Author :
Yarema, Raymond ; Hoff, Jim ; Mekkaoui, Abderrezak ; Manghisoni, Massimo ; Re, Valerio ; Manfredi, Pier Francesco ; Ratti, Lodovico ; Speziali, Valeria
Author_Institution :
Fermi Nat. Accel. Lab., USA
Volume :
52
Issue :
3
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
799
Lastpage :
804
Abstract :
A chip has been developed for reading out the silicon strip detectors in the new BTeV colliding beam experiment at Fermilab. The chip has been designed in a 0.25 μm complementary metal-oxide-semiconductor (CMOS) technology for high radiation tolerance. Numerous programmable features have been added to the chip, such as setup for operation at different beam crossing intervals. A full size chip has been fabricated and successfully tested. The design philosophy, circuit features, and test results are presented in this paper.
Keywords :
noise; nuclear electronics; position sensitive particle detectors; readout electronics; silicon radiation detectors; 0.25 micron; BTeV colliding beam experiment; CMOS; Fermilab silicon strip readout chip; beam crossing intervals; circuit features; complementary metal-oxide-semiconductor technology; design philosophy; front-end electronics; high radiation tolerance; noise; silicon strip detectors; CMOS technology; Circuit noise; Circuit testing; Detectors; Registers; Semiconductor device measurement; Semiconductor device noise; Silicon; Single event upset; Strips; CMOS; front-end electronics; noise; silicon strip detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.850935
Filename :
1487726
Link To Document :
بازگشت