Title :
Beyond Moore´s Law: the interconnect era
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Reversing early limitations on Moore\´s low, interconnectors have replaced transistors as the main determinants of chip performance. This "tyranny of interconnectors" will only escalate in the future, and thus the nanoelectronics that follow silicon must be interconnect-centric. This new technology will likely use "transistors" that approach, if not surpass, the 0.1 ps latency of 10 nm generation silicon transistors. Consequently, if we optimistically assume that the interconnects of this post-Moore\´s Law nanotechnology will be superconductive, their latency will exceed that of the transistors for interconnect lengths greater than 30 μm, while long, on-chip interconnect lengths will be 1,000 times greater at 30 mm. Consequently, mainstream electronics will have an interconnect era beyond Moore\´s law.
Keywords :
integrated circuit design; integrated circuit interconnections; nanoelectronics; superconducting interconnections; technological forecasting; 0.1 ps; 10 nm; 30 micron; 30 mm; IC interconnections; Moore´s law; chip performance determinants; interconnect-centric nanotechnology; on-chip interconnect lengths; superconductive interconnects; technological forecasting; transistor latency; Copper; Delay; Electron tubes; Energy dissipation; Integrated circuit interconnections; Logic devices; Moore´s Law; Silicon; Transistors; Wires;
Journal_Title :
Computing in Science & Engineering
DOI :
10.1109/MCISE.2003.1166548