Title :
Work-Function Variation Effects of Tunneling Field-Effect Transistors (TFETs)
Author :
Kyoung Min Choi ; Woo Young Choi
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
The work-function variation (WFV) effects of tunneling field-effect transistors (TFETs) are discussed for the first time. According to the 3-D device simulation results, TFETs are less immune to the WFV than metal-oxide-semiconductor FETs (MOSFETs) in terms of subthreshold swing (S) and threshold voltage (Vth). TFETs show ~ 1.4× larger Vth standard deviation (σVth) and ~ 4.6× larger S standard deviation (σS) than MOSFETs at high drain voltage (VD). It is because TFET characteristics are mainly determined by WF values of metal grains near to the source region where band-to-band tunneling occurs.
Keywords :
field effect transistors; tunnel transistors; 3D device simulation; MOSFET; TFET characteristics; WF value; WFV effect; band-to-band tunneling; drain voltage; metal grains; metal-oxide-semiconductor FET; subthreshold swing; tunneling field-effect transistors; work-function variation effect; Subthreshold swing $(S)$; threshold voltage $(V_{rm th})$; tunneling field-effect transistors (TFETs); turn-on voltage $(V_{rm turnhbox{--}on})$; work-function variation (WFV);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2264824
